PART |
Description |
Maker |
2SB1566 |
For Power Amplification (-60V, -3A)
|
ROHM[Rohm]
|
2SD2394 |
For Power Amplification (60V, 3A)
|
ROHM[Rohm]
|
IRFP054V |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?
|
Power MOSFET International Rectifier
|
IRFP044 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
|
International Rectifier Power MOSFET
|
IRFP064 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
|
IRF[International Rectifier] Power MOSFET
|
2SC3940 2SC3940A |
Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)
|
Panasonic Corporation Panasonic Semiconductor
|
FDMS5352 |
60V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel 60V N-Channel Power TrenchMOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
2SB1561 |
Medium Power Transistor (-60V -2A 60V 2A)
|
ROHM[Rohm]
|
STB16NF06L STB16NF06L06 |
N-channel 60V - 0.07Ω - 16A - D2PAK STripFET Power MOSFET N-channel 60V - 0.07楼? - 16A - D2PAK STripFET垄芒 Power MOSFET N-channel 60V - 0.07ヘ - 16A - D2PAK STripFET⑩ Power MOSFET
|
STMicroelectronics
|
STN3NE06 4877 |
N-Channel 60V-0.08Ω-3A - SOT-223 STripFETTM Power MOSFET(N沟道功率MOSFE N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET N - CHANNEL 60V - 0.08W - 3A - SOT-223 STripFET] POWER MOSFET From old datasheet system
|
意法半导 STMicroelectronics
|